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| SMBTA06UPN NPN/PNP Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 5 6 4 Type SMBTA06UPN Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 115 C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 3 2 1 VPW09197 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side SC74_Tape C1 6 B2 5 Marking on SC74 package (for example W1s) corresponds to pin 1 of device E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Marking s2P Pin Configuration Package 1=E 2=B 3=C 4=E 5=B 6=C SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Unit V mA A mA mW C Junction - soldering point1) RthJS 105 K/W Aug-21-2002 SMBTA06UPN Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V VCEsat VBE(ON) hFE 100 100 0.25 1.2 V ICEO 100 nA ICBO 20 A ICBO 100 nA V(BR)EBO 4 V(BR)CBO 80 V(BR)CEO 80 V Symbol min. Values typ. max. Unit AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 pF fT 100 MHz 1) Pulse test: t 300s, D = 2% 2 Aug-21-2002 SMBTA06UPN Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 80V 400 mW 10 4 nA EHP00820 CBO 300 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 0 50 max Ptot 250 200 typ 150 100 50 0 0 20 40 60 80 100 120 C 150 100 TA C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 -6 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -5 Ptotmax / PtotDC -4 -3 -2 0 10 1 10 10 10 s 10 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Aug-21-2002 SMBTA06UPN Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA EHP00818 10 3 EHP00819 C mA 100 C 25 C -50 C C 10 2 5 100 C 25 C -50 C 10 2 5 10 1 5 10 1 5 10 0 5 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V V CEsat 0.8 10 -1 0 0.5 1.0 V 1.5 V BEsat DC current gain hFE = f (IC ) VCE = 1V EHP00821 Collector current IC = f (VBE) VCE = 1V EHP00815 10 3 h FE 100 C 10 2 25 C 10 3 mA C 10 2 5 100 C 25 C -50 C -50 C 10 1 5 10 1 10 0 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 -1 0 0.5 1.0 V BE V 1.5 C 4 Aug-21-2002 SMBTA06UPN Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 EHP00817 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 10 3 C 5 Aug-21-2002 |
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